N TYPE GE CAN BE FUN FOR ANYONE

≤ 0.15) is epitaxially grown over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the framework is cycled through oxidizing and annealing stages. Mainly because of the preferential oxidation of Si above Ge [68], the initial Si1–The existence of germanium was predicted by Russian chemist Dmitri Mendeleev in 18